- by Qiyu Li, Tieshuan Dong, Tingcha Wei, Jijun Zhao and Si ZhouAs the atomic-scale manufacturing becoming the ultimate capability pursued by the manufacturing technologies, there has been a quest for low-dimensional materials with well-defined geometric and electronic structures to meet the requirements of miniaturization and multifunctionality for various device applications. Inspired by the emerging low-dimensional halide perovskites with intriguing optical properties, here we systematically explore one-dimensional (1D) atomic wires of transition metal halides. By the first-principles GW BetheāSalpeter equation calculations, MCl4 (M = 4d and 5d group 5ā8 transition metal elements) […]
- by Xinyao Yuan, Tianrui Qi, Jiexin Wang, Huan Wang, Xiaojie Liu and Haitao YinBy integrating the excellent electrostatic control capability of two-dimensional semiconductors with the ācold sourceā device concept, this work proposes a low-power p-type field-effect transistor design based on MA2Z4 materials, using monolayer MoSi2N4 as the channel and its metallic counterpart TaSi2N4 as the source and drain electrodes. First-principles-based quantum transport simulations reveal that the TaSi2N4/MoSi2N4 interface forms a high-quality p-type ohmic contact with a contact resistance as low as 748.1 Ī© Ī¼m. Benefiting from the carrier-filtering effect induced by the characteristic […]
- by Wenxing Li, Zhongshu Jiang, Ao Zou, Yu Yu, Jinke Wang, Ling Miao and Jianjun JiangIn this paper, a novel design strategy is proposed for the realization of a miniaturized broadband absorbing absorptionātransmissionāabsorptionātransmissionāabsorption type frequency selective rasorber (FSR). The proposed FSR consists of a two-layer cascaded structure separated by an air spacer. The novelty of this design lies in the following aspects. First, the top layer employs lumped capacitors to realize dual passbands and broadband absorption, enabling a miniaturized unit-cell topology with a size of 0.0896Ī»L Ć 0.0896Ī»L (Ī»L is the wavelength at the lowest […]
- by Hui Dai, Yong Liu, Zhiyan Hou, Xinqing Han, Zhixian Wei, Chen Wu, Ke Sun, Yufan Zhou, Hongfei Gao, Honglian Song, Xiaofei Yu and Xuelin WangGallium nitride (GaN)-based ultraviolet photodetectors face challenges spectrally selective detection due to their inherent broadband UV response. This work presents a defect-engineering approach utilizing 10 MeV He ion irradiation to achieve filter-free narrowband GaN UV photodetectors. By irradiating GaN epitaxial layers with varying fluences of He ions, systematic characterization of structural, electrical, and optoelectronic properties was conducted. The results demonstrate that the irradiated devices exhibit a substantial reduction in dark current by over four orders of magnitude, a significant narrowing […]
- by Guang-Qiang Yu, Jun-Zhe Li and Xi-Bo LiTa-doped RuO2 has emerged as a highly promising catalyst due to its exceptional oxygen evolution reaction (OER) activity and stability. In this study, we employed density functional theory (DFT) to develop a linear descriptor model based on Ta numbers, systematically investigating the effects of Ta doping on OER performance. This approach establishes a clear structure-property relationship that directly connects atomic-scale features with catalytic activity and stability. Our analysis reveals that intra-layer TaāOāRu local configurations simultaneously enhance both catalytic activity and […]
- by Haonan Yang, Zhongdong Wang, Ruoyu Xu and Mingyu ZhouThe properties of contact materials largely determine the performance of vacuum circuit breakers (VCBs). Consequently, improving material properties through modifications of conventional CuāCr alloys has become a central research focus, particularly in the development of VCBs for higher voltage levels. To elucidate the mechanisms underlying material effects on VCB performance, it is essential to investigate cathode spot behaviour, which fundamentally reflects the interaction between contact materials and the vacuum arc. Although numerous simulation studies have been carried out on cathode […]
- by Zichao Chen, Wei Tian, Yunfei Miao, Jia Ming Zhang, Jinjun Duan and Wenhe LiaoElectroadhesion (EA), with its advantages of broad interfacial applicability, switchable adhesion, and low power consumption, is regarded as having prospective applications for the end-effectors of on-orbit spacecraft maintenance robots. However, its reliability in space has been constrained by the planar electrode configurations commonly adopted, which suffer from issues such as low EA force and poor stability. To address this, a three-dimensional (3D) laminated electrode configuration of EA is proposed in this paper. The mechanism for enhancing the EA force in […]
- by Yu Qian, Qiongyao Cui, Ye Chen, Yongbo Dong and Qinlong RenWith the rapid growth of high-performance computing and big-data processing, electronic devices increasingly operate at high frequency and power, imposing stringent thermal management demands. Modern electronic thermal management systems face dual challenges: heat accumulation during continuous operation and pronounced temperature fluctuations under intermittent conditions. Meanwhile, the low-grade waste heat generated during operation is difficult to be efficiently utilized. By leveraging the latent heat buffering of composite phase-change materials and temperature gradient-ādriven ionic thermoelectric techniques, this work reports an integrated system […]
- by Zhaohui Liu, Ye Dong, Ziming Wang, Zhekai Luo, Hantian Zhang, Wenbing Wu, Wei Yang and Qianhong ZhouThis study focuses on the transition conditions between cathode-dominated and anode-dominated breakdown in vacuum arcs, which are crucial for optimizing the stability and service life of anode vacuum arc sources applied in thin-film deposition. We integrate thermal conduction and FowlerāNordheim emission theories to develop analytical models for cathode breakdown delay time, which are applicable to ultra-short, finite, and long leading-edge time pulse regimes. We also establish an anode breakdown delay time model incorporating electron trajectory diffusion. Our findings reveal that […]
- by Xinling Tang, Guang Yang, Zhongkang Lin, Yulin Gu, Jingfei Wang and Xiaoguang WeiMetalādiamond composite materials are acknowledged as promising high-thermal-conductivity candidates for electronic cooling and energy transfer, offering tunable properties and competitive cost. However, their performance is significantly limited by the poor metal/diamond interfacial thermal conductance (ITC). Many theoretical and experimental studies have highlighted the benefits of modification interlayers at metal/diamond interfaces, but the underlying phonon-level mechanisms remain unclear. Here, we focus on the widely used Cu/diamond heterostructure and reveal how a nanometric Ti interlayer augments interfacial thermal transport. Leveraging lattice dynamics […]
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